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美国EOS InSb探测器技术参数
| 品牌 | 美国EOS | 型号 | InSb |
美国EOS InSb探测器详细介绍
产品介绍：
技术参数：
型号Part No. | Active Dia. [ mm ] | Operating Wavelength [ microns ] | Responsivity [ A/W, min ] | Shunt Resistance [ ohms ] | Shunt Capacitance [ pF ] | Detectivity [ cm-Hz1/2/W ] | Package |
IS-0025 | 0.25 | 1.0 – 5.5 | 2.0 @ 5.0μm | > 10M | 40 | 1.0 x 1011 | LN Dewar |
IS-010 | 1.0 | 1.0 – 5.5 | 2.0 @ 5.0μm | > 1M | 400 | 1.0 x 1011 | LN Dewar |
IS-020 | 2.0 | 1.0 – 5.5 | 2.0 @ 5.0μm | > 200k | 1200 | 1.0 x 1011 | LN Dewar |
IS-030 | 3.0 | 1.0 – 5.5 | 2.0 @ 5.0μm | > 150k | 1800 | 1.0 x 1011 | LN Dewar |
IS-040 | 4.0 | 1.0 – 5.5 | 2.0 @ 5.0μm | > 100k | 3000 | 0.8 x 1011 | LN Dewar |
IS-050 | 5.0 | 1.0 – 5.5 | 2.0 @ 5.0μm | > 50k | 7000 | 0.8 x 1011 | LN Dewar |
IS-070 | 7.0 | 1.0 – 5.5 | 1.8 @ 5.0μm | > 10k | 15000 | 0.5x 1011 | LN Dewar |
IS-100 | 10.0 | 1.0 – 5.5 | 1.8 @ 5.0μm | > 2k | 30000 | 0.5 x 1011 | LN Dewar |
